Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence
作者:
H. A. Zarem,
P. C. Sercel,
J. A. Lebens,
L. E. Eng,
A. Yariv,
K. J. Vahala,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 16
页码: 1647-1649
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.102226
出版商: AIP
数据来源: AIP
摘要:
A new technique for determining carrier diffusion lengths by cathodoluminescence measurements is presented. The technique is extremely accurate and can be applied to a variety of structures. Ambipolar diffusion lengths are determined for GaAs quantum well material, bulk GaAs, Al0.21Ga0.79As, and Al0.37Ga0.63As. A large increase in the diffusion length is found for Al0.37Ga0.63As and is attributed to an order of magnitude increase in lifetime.
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