Current drift mechanism in In0.53Ga0.47As depletion mode metal‐insulator field‐effect transistors
作者:
M. Taillepied,
S. Gourrier,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 15
页码: 978-980
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96629
出版商: AIP
数据来源: AIP
摘要:
A study of current drift phenomena of InGaAs depletion mode metal‐insulator field‐effect transistors fabricated with plasma enhanced chemical vapor deposited Si3N4is reported for the first time. The data indicate that the current varies logarithmically versus time and that the capture mechanism does not depend on temperature. A strong correlation is demonstrated between the amplitude of the hysteresis ofC(V) curves measured on metal‐insulator‐semiconductor devices and the total oxide thickness located between the deposited dielectric film and the InGaAs layer. This behavior suggests that states situated in this native oxide layer are responsible for the current drift. Moreover, these states are energetically distributed in the band gap of InGaAs.
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