We prepared Er silicide films on (111) Si by (1) deposition of Er and contact reaction at 380 °C or (2) vacuum codeposition of Er and Si maintaining the flux ratio close to 1:2. Subsequent annealing at temperatures up to 900 °C yielded monocrystalline, continuous layers, whose properties were examined by means of low‐energy electron diffraction, Auger spectroscopy (insitu) and (exsitu), x‐ray and high‐energy electron diffraction, and Rutherford backscattering. Method 2 was shown to give better results. The films had a hexagonal AlB2structure with Si deficiency up to 20%, which is consistent with formerly published results on Si vacancy formation. We showed that the film structure had an additional periodicity of 15 A˚ along the ⟨110⟩ orientations of Si and of 6 A˚ along the ⟨112⟩ orientations of Si. We demonstrated a feasibility of Si reepitaxy on Er silicide deposited on (111) Si, thus fabricating a novel semiconductor/metal/semiconductor epitaxial heterostructure.