Interface disorder in AlAs/(Al)GaAs Bragg reflectors
作者:
M. T. Asom,
M. Geva,
R. E. Leibenguth,
S. N. G. Chu,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 8
页码: 976-978
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106421
出版商: AIP
数据来源: AIP
摘要:
We have investigated the structural properties of Bragg reflectors grown by molecular beam epitaxy. The reflectors consist of quarter‐wavelength stacks of AlAs/ AlxGa1−xAs. We find a strong dependence of the interface quality on the substrate growth temperature, the Al composition in the ternary alloy, and the presence of impurities in AlAs. We have classified the interface disorder into two categories: interface roughness and structural waviness. We ascribe interface roughness to the segregation of oxygen during AlAs growth. The structural waviness originates from differing surface migration kinetics of Al and Ga which results in phase separation during growth of AlGaAs.
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