The hole‐electron pair generation region in a semiconductor bombarded by a scanning electron beam can be modeled as a circular cylinder tangent to the semiconductor surface. A cross‐sectional plane normal to the cylinder is then examined. Under conditions of high semiconductor surface recombination velocity, a conformal transformation of this plane can be made to yield a geometry in which the method of images can be used to match boundary conditions at the junction and at the semiconductor surface. Thus, a solution for the electron‐beam‐induced current (EBIC) problem can be found in this manner when the generation region is external to the diffused or implanted region of a finite junction depth. An infinite series of images can be used to solve the problem when the generation region is within the diffused or implanted region under conditions of low, as well as high, surface recombination velocity. Thus, expected EBIC results are presented as a function of junction depth.