Quantum transport in ultrathin CoSi2epitaxial films
作者:
J. F. DiTusa,
J. M. Parpia,
Julia M. Phillips,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 5
页码: 452-454
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103663
出版商: AIP
数据来源: AIP
摘要:
Magnetotransport measurements have been performed in thin cobalt disilicide films epitaxially grown on Si(111) wafers. Films of thickness between 4.0 and 20.0 nm were studied in order to ascertain the important electron scattering rates. A temperature independent contribution to the phase breaking scattering rate was determined and attributed to spin–spin scattering of the conduction electrons which increases as the film thickness is decreased. The origin of this scattering and its importance to the low‐temperature electron transport are discussed.
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