This letter presents electrical characteristics of thin (110 A˚) metal‐oxide‐semiconductor gate dielectrics formed by chemical vapor deposited (CVD) SiO2, followed by rapid thermal nitridation and furnace reoxidation. Electrical measurements show that reoxidized‐nitrided CVD dielectrics exhibit lower rates of interface‐state generation and electron trapping under electrical stress, as compared to as‐deposited CVD oxides. Combining with the advantage of lower defect density from CVD oxides (as compared to thermal oxide), these reoxidized‐nitrided CVD films may be promising candidates for thin dielectrics applications.