Silicon doped by neutron transmutation to 1.2×1014phosphorus atoms/cm3was investigated with deep level transient spectroscopy using evaporated Au/n‐Si diodes. Seven bulk electron traps were identified which appear after 30 min N2anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes.