Solid‐Phase Epitaxy of Thin Silicon Film on Si(111) Surface Studied by Scanning Tunneling Microscopy
作者:
Evgeny Ter‐Ovanesyan,
Yishay Manassen,
Dov Shachal,
期刊:
Israel Journal of Chemistry
(WILEY Available online 1996)
卷期:
Volume 36,
issue 1
页码: 45-53
ISSN:0021-2148
年代: 1996
DOI:10.1002/ijch.199600006
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractSolid‐phase epitaxy (SPE) of thin silicon film with a thickness of 0.2–2 bilayers (BL) on Si(111)‐(7 × 7) surface was studied by scanning tunneling microscopy. At small coverage, the SPE growth proceeds via coarsening of islands. As the coverage exceeds the percolation threshold, a ‘mirror’ process consisting of coarsening of voids in the continuous layer takes place. The SPE growth of a thicker continuous layer results in a partly disordered flat surface, displaying a mixture of different reconstructions. Quantitative characterization of this surface by the formalism of pair distribution functions reveals an anisotropy in the orientational order that may indicate that SPE occurs preferably in the step direction. A possibility to use an SPE‐grown layer as a two‐dimensional model for bulk processes in solid
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