Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs
作者:
M. Longo,
N. Lovergine,
A. M. Mancini,
G. Leo,
M. Berti,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 5
页码: 2650-2655
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590250
出版商: American Vacuum Society
关键词: ZnTe
数据来源: AIP
摘要:
A systematic investigation on the mechanisms of nucleation and surface morphology evolution was performed on ZnTe epilayers, deposited on chemically etched GaAs(001) by metalorganic vapor phase epitaxy. A 2D–3D growth mode transition was observed at around two ZnTe equivalent monolyers (ML), which was ascribed to a Stransky–Krastanow growth mode. The 3D growth behavior was correlated to the development of{n11}-type planes, leading to a surface ridging effect along the [11̄0] direction for 4000-ML-thick ZnTe epilayers. The use of a solid-on- solid kinetic roughening model allowed the identification of a mechanism that limits the self- organization of ZnTe nanosized islands, namely, the high density of kink sites found in non- atomically flat GaAs substrates.
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