On the Astm electromigration test structure applied to Al–1%Si/TiN/Ti bamboo metal lines
作者:
Ilaria de Munari,
Massimo Vanzi,
Andrea Scorzoni,
Fausto Fantini,
期刊:
Quality and Reliability Engineering International
(WILEY Available online 1995)
卷期:
Volume 11,
issue 1
页码: 33-39
ISSN:0748-8017
年代: 1995
DOI:10.1002/qre.4680110106
出版商: Wiley Subscription Services, Inc., A Wiley Company
关键词: electromigration;thin metal film;test structure
数据来源: WILEY
摘要:
AbstractThe applicability of NIST‐ASTM electromigration test patterns when used to test ‘bamboo’ metal lines is discussed. Wafer level tests on passivated and non‐passivated samples employing the Al–1%Si/TiN/Ti metallization scheme were performed. Straight metal lines 1000 μm long and 0·9 μm or 1·4 μm wide were tested at two different current densities.j= 3 MA cm2andj= 4·5 MA/cm2, at constant stress temperature (T= 230·C). The failures mainly occurred in the end‐segment areas and hindered the evaluation of the electromigration resistance of the ‘bamboo’ test lines. In order to avoid this problems, completely different test patterns based on different appro
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