The hole drift velocity in high‐purity Ge as a function of electric field (2−104V/cm and temperature (8–220 °K) has been measured with the time‐of‐flight technique. The electric field was applied parallel to the ⟨100⟩ axis. The drift mobility in the Ohmic regime is in agreement with measurements of Hall mobility in high‐purity Ge and with theoretical predictions. At temperatures below 100 °K the drift velocity reaches limiting values, and at 8 °K it is 1.3×107cm/sec.