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Laser annealing of self‐ion damaged silicon

 

作者: G. Foti,   S. U. Campisano,   P. Baeri,   E. Rimini,   W. F. Tseng,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 35, issue 9  

页码: 701-703

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91260

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Partially damaged self‐ion implanted Si(100) has been irradiated by a ruby laser pulse (&lgr;=0.69 &mgr;m,tp=15 ns). Channeling effect technique measurements and TEM micrographs show the reordering of the implanted layer in the laser energy range 1.5–2.5 J/cm2. No polycrystalline transition has been detected. Calculations in terms of local melting of the disordered zone explain the experimental data.

 

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