In situinfrared characterization of the silicon surface in hydrofluoric acid
作者:
J.-N. Chazalviel,
F. Ozanam,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7684-7686
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365348
出版商: AIP
数据来源: AIP
摘要:
The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHxgroups, withx=1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano &etal; [J. Appl. Phys.79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at2230 cm−1observed by these authors actually arises from electrolyte absorption. ©1997 American Institute of Physics.
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