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In situinfrared characterization of the silicon surface in hydrofluoric acid

 

作者: J.-N. Chazalviel,   F. Ozanam,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 81, issue 11  

页码: 7684-7686

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.365348

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The surface of silicon in hydroflouric acid (HF) is coated with covalently attached hydrogen (SiHxgroups, withx=1,2,3), with probably a very small concentration of SiF bonds. In contrast with a recent claim by Niwano &etal; [J. Appl. Phys.79, 3708 (1996)], we show that the concentration of SiF bonds is as yet beyond infrared detection limits. Our analysis indicates that the band at2230 cm−1observed by these authors actually arises from electrolyte absorption. ©1997 American Institute of Physics.

 

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