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Influence of Oxygen on the Formation of Aluminum Silicon Carbide

 

作者: Robert J. Oscroft,   Derek P. Thompson,  

 

期刊: Journal of the American Ceramic Society  （WILEY Available online 1992）
卷期: Volume 75, issue 1  

页码: 224-226

 

ISSN:0002-7820

 

年代: 1992

 

DOI:10.1111/j.1151-2916.1992.tb05472.x

 

出版商: Blackwell Publishing Ltd

 

关键词: aluminum;silicon carbide;densification;oxygen;impurities

 

数据来源: WILEY

 

摘要:

X‐ray diffraction studies have been used to follow the formation of Al4SiC4from Al4C3and SiC and the role played by impurity oxygen. The phase Al2OC forms in the early stages of reaction and reacts with SiC at ≈ 1700°C to produce Al4SiC4plus a small amount of an aluminosilicate liquid. This liquid dissociates at higher temperatures, the resulting evolution of gases hindering complete densification. Higher densities are obtained on hot‐pr

 

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