Rate equation model of high‐temperature performance of InGaAsP quantum well lasers
作者:
A. A. Bernussi,
J. Pikal,
H. Temkin,
D. L. Coblentz,
R. A. Logan,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 26
页码: 3606-3608
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113802
出版商: AIP
数据来源: AIP
摘要:
We present a steady‐state phenomenological rate equation model describing the temperature dependence of the threshold current and slope efficiency of compressively strained InGaAsP multiquantum well lasers. The model is supported by measurements of differential carrier lifetime and gain carried out as a function of temperature. Differential gain, carrier density at transparency, and internal losses are shown to be the key parameters controlling the temperature sensitivity of our devices. ©1995 American Institute of Physics.
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