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Intrinsic and extrinsic recombination radiation from undoped and boron‐doped diamonds formed by plasma chemical vapor deposition

 

作者: H. Kawarada,   Y. Yokota,   A. Hiraki,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 57, issue 18  

页码: 1889-1891

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.104002

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In small particles of chemical vapor deposited (CVD) diamond and polycrystalline thin films composed of the particles, the recombination radiation of free excitons and bound excitons associated with multiple phonons has been observed using cathodoluminescence. The bound excitons are due to neutral acceptors of boron in the diamonds. The cathodoluminescence imaging reveals that the recombinations of free excitons are located at {100} sectors. The crystal perfection and purity is high in {100} sectors compared with {111} sectors formed in the CVD process.

 

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