Superlattices of InAs‐GaSb have been investigated with layer thicknesses ranging from the onset of the semiconductor‐semimetal transition (<100 A˚) to the heterojunction limit (≳1000 A˚). Pronounced Shubnikov–de Haas osicillations have been observed throughout the entire semimetallic regime which are shown to be associated with the ground‐electron sub‐bands, yielding energies of the Fermi level in agreement with those calculated from electron transfers.