Nonlinear high‐frequency response of GaAs metal‐semiconductor field‐effect transistors
作者:
J. H. Abeles,
C. W. Tu,
S. A. Schwarz,
T. M. Brennan,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 23
页码: 1620-1622
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96836
出版商: AIP
数据来源: AIP
摘要:
Calculations show that phase nonlinearity in 1 &mgr;m gate length power GaAs metal‐semiconductor field‐effect transistors (MESFET’s) can be accounted for by the variation of gate‐channel capacitance with gate bias voltage. Buried‐layer GaAs MESFET’s having constant gate‐channel capacitance have been fabricated and their high‐frequency linearity measured. The devices display dramatic reductions of phase nonlinearity to 0.15°/W output power at 6 GHz for powers below saturation in 8 mm gate‐width devices confirming that nonlinear capacitance causes nonlinearity observed in conventional GaAs MESFET’s. Channel transit time, estimated at 3–6 ps, is not significant as a cause of nonlinearity and varies less than 100 fs with signal level.
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