Characterization of tungsten‐related deep levels in bulk silicon crystal
作者:
Yoshihisa Fujisaki,
Toshio Ando,
Hirotsugu Kozuka,
Yukio Takano,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 7
页码: 2304-2306
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341045
出版商: AIP
数据来源: AIP
摘要:
Tungsten‐related deep levels in a silicon crystal are investigated using microwave and conventional deep level transient spectroscopy. It is found that tungsten atoms have two diffusion constants. Most tungsten atoms stay near the surface of Si crystal, but the remainder go deeper than 1 &mgr;m from the surface. It is also found that tungsten atoms make both a hole trap of 0.41 eV and an electron trap of 0.22 eV. Device characteristics are found to be seriously degraded due to deep levels made of deeply diffused tungsten atoms.
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