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Joining and recrystallization of Si using the thermomigration process

 

作者: T. Mizrah,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 2  

页码: 1207-1210

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327689

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thermomigration of Al‐rich liquid zones through Si is used to join single‐crystalline Si wafers and also to recrystallize polycrystalline Si into single‐crystalline material. Several possible applications of this technique are discussed.

 

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