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Extended fine structures in the electron energy loss spectrum of InAs

 

作者: F. D. Schowengerdt,   F. J. Grunthaner,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1988)
卷期: Volume 6, issue 4  

页码: 1386-1391

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584227

 

出版商: American Vacuum Society

 

关键词: EXAFS;EEL SPECTROSCOPY;INDIUM ARSENIDES;BACKSCATTERING;OSCILLATIONS;INELASTIC SCATTERING;CRYSTAL STRUCTURE;X RADIATION;InAs

 

数据来源: AIP

 

摘要:

Extended fine structures have been observed in the electron energy loss spectrum of InAs. The structures consist of oscillations extending several hundred eV above the InM4,5edge. They are of the type recently observed by others in a variety of materials and are attributed to the same phenomenon responsible for extended x‐ray absorption fine structure (EXAFS); namely, an interference between the outgoing and backscattered parts of the ejected core electron wave function, which in this case is observed as a modulation of the energy distribution of the inelastically scattered electrons above the core edge. Because the backscattering occurs mainly in the near‐neighbor environment of the In atoms and the excitation takes place in the surface region, these oscillations carry surface structural information. We have analyzed the data in the standard EXAFS context and have obtained radial distribution functions for In atoms at the surface of the bulk InAs. The measured nearest‐neighbor distance, uncorrected for the phase shifts, of 2.40±0.04 Å agrees well with the results ofK‐shell EXAFS. This is the first reported measurement of fine structure associated withM‐shell excitations involvingdelectrons.

 

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