Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure
作者:
B. Lane,
D. Wu,
H. J. Yi,
J. Diaz,
A. Rybaltowski,
S. Kim,
M. Erdtmann,
H. Jeon,
M. Razeghi,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 11
页码: 1447-1449
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118559
出版商: AIP
数据来源: AIP
摘要:
InAsxSb1−x/InP1−x−yAsxSbydouble heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.©1997 American Institute of Physics.
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