Plasma‐grooved, buried contact silicon solar cells
作者:
C. M. Chong,
K. E. Davies,
S. R. Wenham,
M. Gross,
C. M. Horwitz,
M. A. Green,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 7
页码: 4135-4136
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348429
出版商: AIP
数据来源: AIP
摘要:
Solar cells with less than 1% front‐surface metal shading loss have been made with a deep‐grooving hollow cathode dry etching process. Compared with standard laser‐grooved cells, a 4% relative increase in short‐circuit current density has been demonstrated. Open‐circuit voltages of over 640 mV (air mass 1.5, 25 °C), a fill factor of almost 79%, and the application of an antireflection coating have resulted in a one‐sun efficiency of 19.2%. This is one of the highest efficiencies yet reported for a cleaved 4 cm2silicon solar cell.
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