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Plasma‐grooved, buried contact silicon solar cells

 

作者: C. M. Chong,   K. E. Davies,   S. R. Wenham,   M. Gross,   C. M. Horwitz,   M. A. Green,  

 

期刊: Journal of Applied Physics  (AIP Available online 1991)
卷期: Volume 69, issue 7  

页码: 4135-4136

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.348429

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Solar cells with less than 1% front‐surface metal shading loss have been made with a deep‐grooving hollow cathode dry etching process. Compared with standard laser‐grooved cells, a 4% relative increase in short‐circuit current density has been demonstrated. Open‐circuit voltages of over 640 mV (air mass 1.5, 25 °C), a fill factor of almost 79%, and the application of an antireflection coating have resulted in a one‐sun efficiency of 19.2%. This is one of the highest efficiencies yet reported for a cleaved 4 cm2silicon solar cell.

 

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