The suppression of misfit dislocation introduction in heavily carbon doped GaAs
作者:
S. P. Westwater,
T. J. Bullough,
T. B. Joyce,
B. R. Davidson,
L. Hart,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 1
页码: 60-62
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119306
出版商: AIP
数据来源: AIP
摘要:
The relaxation of heavily carbon doped GaAs, grown on (001) GaAs substrates was investigated using transmission electron microscopy and x-ray diffraction. Misfit dislocation introduction occurred only significantly above Matthews and Blakeslee’s critical thickness, with the onset of relaxation being delayed as the C concentration was increased. The resultant strain relaxation was highly anisotropic with the introduction of As-cored misfit dislocations being totally suppressed at the highest C levels, resulting in cracking of the epilayer. Locking of As-cored partial dislocations and a reduction in misfit dislocation velocity is proposed as the cause of the anisotropy and lack of relaxation. ©1997 American Institute of Physics.
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