Effect of a magnetic field on the gate current in heterostructure field‐effect transistors
作者:
You‐jun Chen,
E. Dan Dahlberg,
M. Shur,
A. Akinwande,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 20
页码: 2028-2030
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103007
出版商: AIP
数据来源: AIP
摘要:
We report the effect of relatively weak (classical) magnetic fields on the gate current in heterostructure field‐effect transistors. With a three‐terminal device using the measured dependences, we deduce an average electron velocity and the average concentration of the two‐dimensional (2‐d) electron gas in the channel. In addition, our results clearly show the onset of velocity saturation in high electric field. The value of the effective saturation velocity in the channel is of the order of 105m/s, in agreement with the values deduced from device transconductance.
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