Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
作者:
E. Yablonovitch,
D. M. Hwang,
T. J. Gmitter,
L. T. Florez,
J. P. Harbison,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 24
页码: 2419-2421
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102896
出版商: AIP
数据来源: AIP
摘要:
Epitaxial liftoff is an alternative to lattice‐mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108forx≤0.4). The resulting AlxGa1−xAs films tend to bond by natural intermolecular surface forces to any smooth substrate (Van der Waals bonding). We have demonstrated GaAs thin‐film bonding by surface tension forces onto Si, glass, sapphire, LiNbO3, InP, and diamond substrates, as well as self‐bonding onto GaAs substrates. In transmission electron microscopy the substrate and thin‐film atomic lattices can be simultaneously imaged, showing only a thin (20–100 A˚) amorphous layer in between.
点击下载:
PDF
(432KB)
返 回