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Variation of the ideality factor in the curent‐voltage characteristics of double‐heterostructure diodes

 

作者: E. S. Yang,   C. M. Wu,   R. Y. Hung,  

 

期刊: Journal of Applied Physics  （AIP Available online 1980）
卷期: Volume 51, issue 2  

页码: 1262-1264

 

ISSN:0021-8979

 

年代: 1980

 

DOI:10.1063/1.327704

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The low‐current I‐V characteristics of AlxGa1−xAs‐GaAs DH laser diodes have been investigated. The variation of the ideality factor is explained by taking into account the interaction of the thermionic‐field emission and interface charge. Both theoretical calculations and experimental data are presented here to show the validity of our model.

 

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