Oxide formation during plasma etching of silicon‐containing resists
作者:
M. A. Hartney,
J. N. Chiang,
D. W. Hess,
D. S. Soane,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 16
页码: 1510-1512
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101337
出版商: AIP
数据来源: AIP
摘要:
Surface modification during oxygen plasma etching of polysilylmethylstyrene resists has been monitored using x‐ray photoelectron spectroscopy. Plasma exposure converted the silicon present in the polymers to an oxidized surface region which prevented further chemical etching. Conversion was more rapid and more complete when etching under conditions where higher energy ion bombardment occurred. Polysilylmethylstyrene reached a steady‐state oxide thickness between 3.4 and 5.8 nm, depending on etching conditions. A copolymer of this material with chloromethylstyrene showed a comparable thickness when etched at high ion energies, but did not reach a steady state when etched at conditions where the average ion energy was below 110 eV.
点击下载:
PDF
(393KB)
返 回