Structure and properties of sol-gel processed (Pb,La)TiO3ferroelectric thin films
作者:
Liu Meidong,
Wang Peiying,
Li Churong,
Wu Guoan,
Rao Yunhua,
Zeng Yike,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 5,
issue 4
页码: 303-310
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408223887
出版商: Taylor & Francis Group
关键词: Ferroelectric;sol-gel process;epitaxial growth;(Pb,La)TiO3;thin film.
数据来源: Taylor
摘要:
The influence of heat treatment and substrate materials on PLT thin films by sol-gel processing has been researched. Epitaxial growth PLT thin films with perovskite-type structure on sapphire, SrTiO3and MgO single crystal substrates have been prepared. The epitaxial relations are (100)PLT28/(100)SrTiO3, (111)PLT28//(0001)sapphire and (100)PLT14//(100)MgO. The PLT polycrystal thin films with perovskite-type structure on Si single crystal and quartz glass substrates have been prepared. The remanent polarization Pr and the coercive field Ec of PLT15 ceramic thin films are 7.7 μc/cm2and 34 kv/cm at 4 KHz respectively. The optical transmittance of PLT28 ceramic thin films within the wavelength range of λ = 500–1000 nm is approximately 80%.
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