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Structure and properties of sol-gel processed (Pb,La)TiO3ferroelectric thin films

 

作者: Liu Meidong,   Wang Peiying,   Li Churong,   Wu Guoan,   Rao Yunhua,   Zeng Yike,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1994)
卷期: Volume 5, issue 4  

页码: 303-310

 

ISSN:1058-4587

 

年代: 1994

 

DOI:10.1080/10584589408223887

 

出版商: Taylor & Francis Group

 

关键词: Ferroelectric;sol-gel process;epitaxial growth;(Pb,La)TiO3;thin film.

 

数据来源: Taylor

 

摘要:

The influence of heat treatment and substrate materials on PLT thin films by sol-gel processing has been researched. Epitaxial growth PLT thin films with perovskite-type structure on sapphire, SrTiO3and MgO single crystal substrates have been prepared. The epitaxial relations are (100)PLT28/(100)SrTiO3, (111)PLT28//(0001)sapphire and (100)PLT14//(100)MgO. The PLT polycrystal thin films with perovskite-type structure on Si single crystal and quartz glass substrates have been prepared. The remanent polarization Pr and the coercive field Ec of PLT15 ceramic thin films are 7.7 μc/cm2and 34 kv/cm at 4 KHz respectively. The optical transmittance of PLT28 ceramic thin films within the wavelength range of λ = 500–1000 nm is approximately 80%.

 

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