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Epitaxy of LiF on Ge(100)

 

作者: D. A. Lapiano‐Smith,   E. A. Eklund,   F. J. Himpsel,   L. J. Terminello,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 17  

页码: 2174-2176

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106091

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is shown that LiF(100) films with the electronic properties of cleaved bulk LiF crystals can be grown epitaxially on Ge(100). These include an exceptionally large, negative electron affinity of −2.7 eV, which leads to intense photoemission at zero kinetic energy. The valence band offset ranges from 7.3–7.6 eV.

 

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