The picosecond decay of carriers in InGaAs, following photo excitation at photon energies just above the band edge, has been measured. A mode‐locked neodymium:yttrium aluminum garnet pumped optical parametric amplifier provided the tunable, 35‐ps pulses for excite‐probe measurements. At carrier densities in excess of 1018cm−3Auger processes are found to dominate the carrier recombination. We determine an Auger rate of 2.5±0.5×10−28cm6 s−1.