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Hall Field Relaxation in Semiconductors at High Frequency

 

作者: Keith S. Champlin,  

 

期刊: Journal of Applied Physics  （AIP Available online 1960）
卷期: Volume 31, issue 10  

页码: 1770-1771

 

ISSN:0021-8979

 

年代: 1960

 

DOI:10.1063/1.1735444

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using a simple extension of standard magneto‐ionic theory, the frequency dependence of the complex Hall field is calculated for samples with rectangular, cylindrical, and spherical geometry. The result has application to ``open‐circuit'' Hall effect measurements on semiconductors at microwave frequencies.

 

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