Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodes
作者:
E. R. Brown,
C. D. Parker,
T. C. L. G. Sollner,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 10
页码: 934-936
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100812
出版商: AIP
数据来源: AIP
摘要:
A new equivalent circuit is derived for the double‐barrier resonant tunneling diode. An essential feature of this circuit is the addition of an inductance in series with the differential conductanceGof the device. The magnitude of the inductance is &tgr;N/Gwhere &tgr;Nis the lifetime of the (Nth) quasibound state through which all of the conduction current is assumed to flow. This circuit model is used to derive values of theoretical oscillator power that are in much better agreement with experimental results than theoretical predictions made without the inductance. The conclusion is drawn that the response of the double‐barrier structure to a time varying potential is consistent with the coherent picture of resonant tunneling.
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