Dark current analysis of Si homojunction interfacial work function internal photoemission far‐infrared detectors
作者:
H. X. Yuan,
A. G. U. Perera,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 17
页码: 2262-2264
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113186
出版商: AIP
数据来源: AIP
摘要:
A detailed theoretical investigation of dark current mechanisms is performed for a novel Sin+‐ihomojunction interfacial work function internal photoemission (HIWIP) far‐infrared (FIR) detector. Thermionic emission, thermionic field emission and field emission currents, including the image force effect, are calculated and compared as functions of bias voltage and temperature. The bias and temperature dependence of detector noise equivalent power (NEP), limited by thermal noise and background noise, is also calculated. From these results, the optimal operating temperatures and bias voltages are determined. Results show that Si HIWIP FIR detectors may have a performance comparable to the conventional Ge FIR detectors, with some unique advantages over them. ©1995 American Institute of Physics.
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