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Electron beam epitaxy of alloy semiconductors

 

作者: Takao Wada,   Yoshinobu Maeda,   Shinji Kojima,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 471-486

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908213022

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

It was investigated that, when an Al evaporated layer on a GaP (GaAs, GaAs1−yPy) substrate was bombarded with total fluences of 0.1−1.0 × 1018electrons cm−2at 7 MeV and at 50°C, a thin heteroepitaxial layer of AlxGa1−xP (AlxGa1−xAs, AlxGa1−xAs1−yPy) crystal was grown on S-doped (111), (100) and (110) GaP [(110) Cr, O-doped GaAs, (100) Te-doped GaAS1−yPy] substrates.

 

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