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Luminescence of Be‐ and Mg‐doped GaN

 

作者: M. Ilegems,   R. Dingle,  

 

期刊: Journal of Applied Physics  （AIP Available online 1973）
卷期: Volume 44, issue 9  

页码: 4234-4235

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662930

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The luminescence of vapor‐grown GaN doped with Be or Mg shows deep emission bands in the yellow‐green (Be) or blue‐violet (Mg) wavelength regions in addition to the near‐gap features previously recognized in Zn‐ and Cd‐doped GaN. The crystals are of high resistivity at high Be or Mg doping levels.

 

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