Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition
作者:
G. Capellini,
L. Di Gaspare,
F. Evangelisti,
E. Palange,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 4
页码: 493-495
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118191
出版商: AIP
数据来源: AIP
摘要:
In this letter, we present an atomic-force-microscopy investigation of the Stranski–Krastanov growth of Ge on Si(100). Upon increasing the base width of the islands, two morphology transitions are found. The first transition occurs at a base width of ∼50–60 nm and marks the evolution from few-monolayer-thick terraces to square-base pyramidal islands. In the second transition, which takes place when the base width exceeds ∼300 nm, the island shape changes from square base pyramids to tetragonal truncated pyramids. Both transitions are brought about by the need for the system to minimize the elastic energy. ©1997 American Institute of Physics.
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