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Type‐II quantum‐well lasers for the mid‐wavelength infrared

 

作者: J. R. Meyer,   C. A. Hoffman,   F. J. Bartoli,   L. R. Ram‐Mohan,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 6  

页码: 757-759

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115216

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We discuss an improved mid‐wave infrared diode laser structure based on InAs‐Ga1−xInxSb‐ InAs‐Ga1−xAlxSb Type‐II multiple quantum wells. The proposed design combines strong optical coupling, 2D dispersion for both electrons and holes, suppression of the Auger recombination rate, and excellent electrical and optical confinement. ©1995 American Institute of Physics.

 

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