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Plasma annealing of ion implanted semiconductors

 

作者: N. J. Ianno,   J. T. Verdeyen,   S. S Chan,   B. G. Streetman,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 8  

页码: 622-624

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92825

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An electron beam generated by a gas discharge is used to anneal ion implanted silicon. The discharge operating parameters as well as the electron beam energy are measured. Finally, plasma annealing of BF+2implantedn‐type silicon is examined by observing the sheet resistivity of the implanted layers and the resulting diode characteristics.

 

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