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Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology

 

作者: Y. Shimada,   K. Arita,   E. Fujii,   T. Nasu,   Y. Nagano,   A. Noma,   Y. Izutsu,   K. Nakao,   K. Tanaka,   T. Yamada,   Y. Uemoto,   K. Asari,   G. Nakane,   A. Inoue,   T. Sumi,   T. Nakakuma,   S. Chaya,   H. Hirano,   Y. Judai,   Y. Sasai,   T. Otsuki,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 27, issue 1-4  

页码: 291-314

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228476

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric memory;embedded LSI;SrBi2(Ta;Nb)2O9;contactless IC card

 

数据来源: Taylor

 

摘要:

High performance LSIs embedded with ferroelectric random access memory (FeRAM) for contactless IC cards are now commercially available. The emphasis is placed on the materials solution with SrBi2(Ta,Nb)2O9(SBTN) which enables to exploit the potential performance of FeRAMs for composite logic/microcontroller LSIs operating at high speeds and low powers. The leading-edge 0.6-μm and double-level-metal FeRAM technology produces microcontroller-embedded LSIs with 14-kbit or 64-kbit FeRAM. A mature 0.8-μm and single-level-metal process has been built to maximize the die yield. Yields exceeding 90% indicate the excellent process stability. Product qualification data have proven the robust FeRAM technologies.

 

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