Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures
作者:
Z. Borsosfoldi,
M. Rahman,
I. A. Larkin,
A. R. Long,
J. H. Davies,
J. M. R. Weaver,
M. C. Holland,
J. G. Williamson,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 26
页码: 3666-3668
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114134
出版商: AIP
数据来源: AIP
摘要:
We demonstrate single electron charging in fully controllable nanoscale quantum devices at temperatures above 4 K. Hitherto, single electron devices operating at ‘‘high’’ temperatures have been two‐terminal, having no control electrode, whereas fully tunable structures such as quantum dots have only shown charging effects at temperatures of 4 K or less. We have fabricated ultrasmall quantum dots on modulation doped heterostructures where the two‐dimensional electron gas is less than 30 nm from the surface. Dots with lithographic diameter 150 nm show Coulomb oscillations up to temperatures of 7 K. Higher temperature operation allows potential applications to be considered without the need, for example, of a dilution fridge. ©1995 American Institute of Physics.
点击下载:
PDF
(60KB)
返 回