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Single electron charging at temperatures above 4 K in ultrasmall lateral quantum dots patterned on shallow GaAs/AlGaAs heterostructures

 

作者: Z. Borsosfoldi,   M. Rahman,   I. A. Larkin,   A. R. Long,   J. H. Davies,   J. M. R. Weaver,   M. C. Holland,   J. G. Williamson,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 26  

页码: 3666-3668

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114134

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We demonstrate single electron charging in fully controllable nanoscale quantum devices at temperatures above 4 K. Hitherto, single electron devices operating at ‘‘high’’ temperatures have been two‐terminal, having no control electrode, whereas fully tunable structures such as quantum dots have only shown charging effects at temperatures of 4 K or less. We have fabricated ultrasmall quantum dots on modulation doped heterostructures where the two‐dimensional electron gas is less than 30 nm from the surface. Dots with lithographic diameter 150 nm show Coulomb oscillations up to temperatures of 7 K. Higher temperature operation allows potential applications to be considered without the need, for example, of a dilution fridge. ©1995 American Institute of Physics.

 

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