Electrical and structural properties of Si/CrSi2/Si heterostructures fabricated using ion implantation
作者:
Alice E. White,
K. T. Short,
D. J. Eaglesham,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 13
页码: 1260-1262
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103334
出版商: AIP
数据来源: AIP
摘要:
Using high dose implantation of Cr+into (111)‐oriented Si, followed by annealing, we have created continuous, buried layers of CrSi2in Si. The layers are stoichiometric and epitaxially aligned along one of the substrate 〈111〉 directions. Results of temperature‐dependent resistivity and Hall measurements on the early layers show that they arep‐type degenerate semiconductors consistent with data for bulk samples. More recent layers appear to be single crystal with [0001] parallel to [111] and arentype with lower carrier density.
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