Remote plasma‐enhanced chemical‐vapor deposition of epitaxial Ge films
作者:
R. A. Rudder,
G. G. Fountain,
R. J. Markunas,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 60,
issue 10
页码: 3519-3522
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.337604
出版商: AIP
数据来源: AIP
摘要:
Epitaxial Ge films have been deposited at 300 °C using a remote plasma‐enhanced chemical‐vapor deposition technique where metastable He atoms flow downstream from the plasma region to dissociate GeH4molecules into deposition precursor species. Ge epitaxy is demonstrated on Ge(111), Si(100), and GaAs(111)Ga face substrates. Aninsitucleaning process that involves a moderate thermal bake at 300 °C and a hydrogen plasma etch of the native oxides is integral to the process. Reflection high‐energy electron diffraction is used to examine surface quality just prior to and after deposition. Uniform integral order diffraction streaks and fractional order reconstruction features observed from the Ge epilayers indicate that high quality Ge epitaxial layers can be grown using remote plasma‐enhanced chemical‐vapor deposition.
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