Chemical identification of deep energy levels in Si:Se
作者:
H. G. Grimmeiss,
E. Janze´n,
B. Skarstam,
A. Lodding,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 12
页码: 6238-6242
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327609
出版商: AIP
数据来源: AIP
摘要:
Profiles of deep energy states in selenium diffused siliconp+njunctions have been studied by junction capacitance techniques and secondary ion mass spectroscopy (SIMS). In both cases similar profiles are obtained. Since the profiles measured by SIMS are due to selenium atoms, it is concluded that selenium is responsible for the two dominant energy levels previously investigated in Si:Se by junction space‐charge techniques.
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