We demonstrate a novel long‐wavelength vertical‐cavity laser structure employing two AlAs/GaAs mirrors and a strain‐compensated InGaAsP quantum‐well active region. The lasers have been fabricated bywaferfusionand have the lowest room‐temperature pulsed threshold current density of 3 kA/ cm2at 1.52 &mgr;m. Eight laser sizes ranging from 9 to 60 &mgr;m were fabricated with threshold currents as low as 12 mA. Single transverse mode operation was observed on the 9 &mgr;m device, while other devices lased multimode. The maximum pulsed output power was 7 mW. ©1995 American Institute of Physics.