Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
作者:
M. Seelmann-Eggebert,
J. L. Weyher,
H. Obloh,
H. Zimmermann,
A. Rar,
S. Porowski,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 18
页码: 2635-2637
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120163
出版商: AIP
数据来源: AIP
摘要:
The polarity is found to be a key parameter for the growth of high quality epitaxial GaN films on sapphire (00.1) substrates. A model is suggested which may consistently explain the observed influence of the process parameters on the polar orientation of the epitaxial film. A simple etching technique is proposed for quick distinction of the film polarity. The assignment of the etching behavior to the proper crystal structure is achieved by an analysis of the respective two-dimensional photoelectron diffraction patterns. ©1997 American Institute of Physics.
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