The effect of substrate temperature on the recrystallization of plasma chemical vapor deposition amorphous silicon films is investigated. The grain size of polycrystalline silicon films recrystallized at 600 °C increases as the substrate temperature decreases. The enlargement in the grain size is attributed to the decrease in the nucleation rate. The nucleation rate is suppressed by an increase in structural disorder of the Si network. Electrical properties of recrystallized films are improved by the increase in the grain size.