Investigation of the Sputtering of Silicon
作者:
S. P. Wolsky,
E. J. Zdanuk,
期刊:
Journal of Applied Physics
(AIP Available online 1961)
卷期:
Volume 32,
issue 5
页码: 782-786
ISSN:0021-8979
年代: 1961
DOI:10.1063/1.1736106
出版商: AIP
数据来源: AIP
摘要:
A sensitive vacuum microbalance was used to determine the sputtering yields for the argon‐silicon system over an energy range of 34–800 ev. Preliminary data for the ion bombardment of silicon with CO2was also obtained. Variation of the discharge voltage provided information on the relative sputtering effectiveness of Ar+and Ar2+ions. Extrapolation of the low‐energy data indicates a probable threshold energy of 15–20 ev. The sputtering data indicate that the target surfaces were clean and reproducible. The experimental method is shown to be well suited for sputtering studies.
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