A combined electron and ion beam lithography system
作者:
J. R. A. Cleaver,
H. Ahmed,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1985)
卷期:
Volume 3,
issue 1
页码: 144-147
ISSN:0734-211X
年代: 1985
DOI:10.1116/1.583198
出版商: American Vacuum Society
关键词: ION IMPLANTATION;MACHINING;FABRICATION;PHOTORESISTS;ION BEAMS;ELECTRON BEAMS;FOCUSING;ELECTROSTATIC LENSES;SPUTTERING;CRYSTAL DOPING;LITHOGRAPHY;RESOLUTION
数据来源: AIP
摘要:
In scanning beam microfabrication processes, including resist exposure, direct maskless ion implantation, and micromachining, ions and electrons have complementary roles. It is advantageous to have, within a single scanning beam machine, finely focused and precisely coregistered beams of both ions and electrons. The requirement for the ion beam and the electron beam to have a common axis and to be focused at the target by a high resolution lens with short working distance can be met both by solely electrostatic and by combined magnetic and electrostatic lenses. Such lenses, and complete probe‐forming systems incorporating them, are considered.
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