首页   按字顺浏览 期刊浏览 卷期浏览 A combined electron and ion beam lithography system
A combined electron and ion beam lithography system

 

作者: J. R. A. Cleaver,   H. Ahmed,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1985)
卷期: Volume 3, issue 1  

页码: 144-147

 

ISSN:0734-211X

 

年代: 1985

 

DOI:10.1116/1.583198

 

出版商: American Vacuum Society

 

关键词: ION IMPLANTATION;MACHINING;FABRICATION;PHOTORESISTS;ION BEAMS;ELECTRON BEAMS;FOCUSING;ELECTROSTATIC LENSES;SPUTTERING;CRYSTAL DOPING;LITHOGRAPHY;RESOLUTION

 

数据来源: AIP

 

摘要:

In scanning beam microfabrication processes, including resist exposure, direct maskless ion implantation, and micromachining, ions and electrons have complementary roles. It is advantageous to have, within a single scanning beam machine, finely focused and precisely coregistered beams of both ions and electrons. The requirement for the ion beam and the electron beam to have a common axis and to be focused at the target by a high resolution lens with short working distance can be met both by solely electrostatic and by combined magnetic and electrostatic lenses. Such lenses, and complete probe‐forming systems incorporating them, are considered.

 

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